发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To resist returning optical noises, by providing an excessive-saturation absorbing region, which can control absorption coefficient by current, in a laser resonator, thereby transmitting laser pulses, and obtaining a multiple mode. CONSTITUTION:A double P-N heterojunction comprising a P-type Ga1-xAlxAs layer 3, which is laminated on an N-type GaAs substrate 1, is provided. A current narrowing region 6 in the direction, which is perpendicular to a resonator, is divided into two parts in the direction of the resonator. A gain part electrode 7 and an excessive-saturation absorbing part electrode 8 on an epitaxial layer 5 are correspondingly divided into two parts. Exciting currents are separately controlled. Control currents are made to flow so that one part is a region, in which gain is obtained by the exciting current, and the other region acts as an excessive-saturation absorbing region. When an excessive- saturation absorbing body, i.e., a material, whose absorption coefficient decreases with the increase in light intensity, is present in a laser medium, pulse type laser oscillation can be carried out with respect to a driving DC.
申请公布号 JPS61161786(A) 申请公布日期 1986.07.22
申请号 JP19850003476 申请日期 1985.01.11
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KUME MASAHIRO;ITO KUNIO;SHIMIZU YUICHI
分类号 H01S5/00 主分类号 H01S5/00
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