| 摘要 |
PURPOSE:To eliminate errors on positioning and the limitation of the density of integration resulting from the arrangement of semiconductor illuminants in a hybrid manner by forming the resonating directions and resonating surfaces of each of a plurality of semiconductor lasers shaped in a monolithic manner so that angles formed by the resonating directions and the resonating surfaces differ. CONSTITUTION:A semiconductor device is formed so that angles shaped by the extensions 11b-15b of current injection regions 11a-15a in semiconductor lasers 11-15 and normals 18 erected to resonating surfaces 16 and 17 are each represented by phia-phie. Since n (the refractive index of a crystal) takes approximately 3.5 and n0 (the refractive index of air) approximately 1 on a projection from a crystal such as a GaAs one, laser beams are projected at an inclination of approximately 3.5 deg. to the normals 18 when phi is selected at 1 deg.. Accordingly, each angle phia-phie is set severally at +1.0 deg., +0.5 deg., 0.0 deg., -0.5 deg. and -1.0 deg., thus preparing an array laser, projecting angles thetaa-thetae therefrom each take +3.5 deg., +1.75 deg., 0.0 deg., -1.75 deg. and -3.5 deg..
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