摘要 |
PURPOSE:To prevent the failure of ground bonding, and to enable the improvement in heat resistance by a method wherein many recesses are formed in the region between the semiconductor element mount and the ground bonding section of a heat dissipation plate. CONSTITUTION:Bonding wires 27 are laid from a semiconductor element 23 to the ends of outer leads 24 and to the ground bonding section 25, and many recesses 28 are formed in the ground bonding section 25. The recesses 28 can be easily formed by both-surface etching according to the mask pattern of one surface of the etching frame body in case of construction of the frame to the mount 24 or the like. Since the recesses 28 are discontinuously formed in the ground bonding section 25, the extension of the mount material constituting a solder layer 26 to the bonding region can be effectively blocked. |