发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To eliminate the application of a thermal impact to the junction of an aluminum wiring layer and a diffused layer even when a redundancy fuse is fused by a laser light by providing a wide wiring portion on the wiring layer for connecting the fuse with the diffused layer. CONSTITUTION:A wiring layer 2 for connecting a redundancy fuse 1 with a diffused layer 4 has a wide wiring portion 12. The portion 12 is formed as near as the layer 4. The portion 12 performs a role of a heat sink plate. In other words, when the fuse 1 fused by a laser light, the heat generated by the laser light is transmitted through the layer 2 and dissipated in the portion 12. Accordingly, the heat arrived at the junction of the layers 2 and 4 is reduced to prevent the junction from damaging due to thermal impact.
申请公布号 JPS61110447(A) 申请公布日期 1986.05.28
申请号 JP19840232042 申请日期 1984.11.02
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAMAGATA NARIHITO;YAMADA MICHIHIRO;MOROOKA KIICHI;MIYAMOTO HIROSHI
分类号 H01L27/10;H01L21/82 主分类号 H01L27/10
代理机构 代理人
主权项
地址