| 发明名称 |
TRANSISTOR MOS A FORT GRADIENT DE DOPAGE SOUS SA GRILLE |
| 摘要 |
The invention concerns an LDD-type MOS transistor comprising under its grid zone a first lightly-doped region (31) followed by a second region with the same type of conductivity with higher doping level with a high doping gradient between the two regions. The interface zone between the two regions contain nitrogen atoms resulting from a nitrogen implantation produced before epitaxy.
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| 申请公布号 |
FR2762138(A1) |
申请公布日期 |
1998.10.16 |
| 申请号 |
FR19970004710 |
申请日期 |
1997.04.11 |
| 申请人 |
SGS THOMSON MICROELECTRONICS SA |
发明人 |
PAPADAS CONSTANTIN;REGOLINI JORGE LUIS;GROUILLET ANDRE;MORIN CHRISTINE;SKOTNICKI THOMAS |
| 分类号 |
H01L21/22;H01L21/265;H01L21/336;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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