| 摘要 |
PURPOSE:To improve the homogeneity and smoothness of a coating by decomposing an org. silicon compd. by a photo-CVD method to deposit silicon carbide on a substrate and coating further silicon carbide thereon by vapor-phase thermal decomposition of the org. silicon compd. CONSTITUTION:The org. silicon compd. having at least one silicon-hydrogen bond and hydrogenated silicon are supplied respectively through introducing ports 5, 6 at a prescribed molar ratio. The reactive gas introduced to a reaction zone A is decomposed by the UV light of a low pressure mercury lamp 11 and silicon carbide is deposited on the substrate 4 heated by a heater 2. The substrate 4 is then transferred together with the heater 2 to a reaction zone B where the org. silicon compd. fed there is thermally decomposed in a vapor phase at 700-1,500 deg.C by a heater 12 and the silicon carbide is deposited on the silicon carbide coating film on the substrate 4. The silicon carbide coating on the substrate 4 is made homogeneous without cracking by the above-mentioned method, by which the smoothness thereof is improved. |
