发明名称 |
Semiconductor device |
摘要 |
A programming circuit used with a semiconductor memory comprising normal as well as spare memory cells allows any of the normal memory cells to be replaced by a spare memory cell and includes a fuse and a MOSFET connected in series between first and second power supply terminals. A voltage signal at the junction between the fuse and the MOSFET is delivered to the gate of the MOSFET after being delayed after power is supplied. |
申请公布号 |
US4546455(A) |
申请公布日期 |
1985.10.08 |
申请号 |
US19820446669 |
申请日期 |
1982.12.03 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
IWAHASHI, HIROSHI;OCHII, KIYOFUMI |
分类号 |
G11C29/00;(IPC1-7):G11C11/40 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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