| 摘要 |
A static random access memory (RAM) includes a flip-flop for storing data which contains a pair of cross-coupled inverters, a data line, a single MOS transistor connected between the flip-flop and the data line for selecting a RAM cell and for reading/writing data, a word line for carrying a signal applied to the gate of the MOS transistor, and a circuit for applying a voltage to the word line, the signal being higher in a read operation of the data than that in a write operation of the data. Only a single MOS transistor is required to access the memory element in both the read and write operations.
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