| 摘要 |
PURPOSE:To provide a titled device which can heat-treat efficiently and uniformly a material having a relatively large surface area by providing a mechanism which sets the deflecting center of an electron beam and a mechanism which decreases the scanning speed of the beam when the deflecting angle of the electron beam with respect to the deflection center increase. CONSTITUTION:A beam deflecting system deflects the electron beam 2 which has a linar section and passes the orbit at a deflection center 4 by using a deflecting coil 3 in a direction X in the stage of scanning the surface of a semiconductor wafer 1 and annealing the surface. The deflecting coil for deflection in a direction Y is separately provided. The trace 5 of the electron beam irradiation after the beam 2 is deflected and scanned in the direction X is annealed into a belt shape. If reference saw tooth wave current 21 is passed to the coil 3, the scanning speed of the beam on the wafer 1 is made approximately constant or slightly higher in the peripheral part where the angle of deflection is large. If the deflecting coil current of the synthesized wave 32 superposed with sinusoidal current waveform 31 for correction is thereupon used, the change rate of the current hence the scanning speed are maximized at the deflection center 33 in the direction X and the current change rate (approximately proportional to the scanning speed) is smaller the nearer the peripheral parts 34, 35. |
