| 摘要 |
PURPOSE:To obtain a photoconductive member superior in photosensitivity, etc., by forming a layer composed of a layer region made of amorphous Ge and a photoconductive layer region made of amorphous Si, and contg. N in a nonuniform concn. distribution in the layer thickness direction and an amorphous layer made of Si and O in succession on a substrate. CONSTITUTION:The objective photoconductive member 100 is obtained by successively forming on a substrate 101 the first layer 102 composed of an amorphous layer region 105 made of Ge and a photoconductive layer region 106 made of amorphous si, and the second amorphous layer 103 made of Si and O. The first layer 102 contains N in a concn. distribution in the layer thickness direction having concn. C1 in the first region, C3 in the third region, and C2 in the second region formed in this order from the side of the substrate 101, and C3 is never highest alone, and when one of the three is 0, the other two are not equal to each other. |
