| 摘要 |
PURPOSE:To obtain a high resistance region having a small cip area and high accuracy by growing an N type layer on a P type Si substrate in an epitaxial manner, diffusing and forming two N<+> type regions to the N type layer at a regular interval and diffusing and shaping a shallow P type resistance region of a predetermined shape extending over the N<+> type regions on both sides of a clearance between these N<+> type regions from the clearance. CONSTITUTION:An N type layer 12 is grown on a P type Si substrate 11 in an epitaxial manner, the whole surface is coated with an SiO2 film 13, and holes 14 are bored positioned on the outside of a resistance forming section. An N type impurity is diffused into the holes 14 to form N<+> type regions 15 at a regular interval. The surfaces of the holes 14 are closed by thin oxide films 16, a hole 17 for shaping a resistor is bored to the film 13 remaining on a space, and a P type impurity is diffused to form a shallow P type resistance region 18 in predetermined size extending over the regions 15 on both sides of the hole 17 from the layer 12 positioned in the space. The oxide film is all renewed by a novel oxide film, holes are bored, and an electrode is formed to the region 18. |
