| 摘要 |
PURPOSE:To facilitate the operations to bury and cause to grow layers in an SBH-type high-output semiconductor laser, by providing a specified layer between a clad layer and a cap layer. CONSTITUTION:An N type GaAs substrate 1 is provided with an N type G0.66 Al0.34As clad layer 2, an N type Ga0.7Al0.3As light quide layer 3, an undoped Ga0.86Al0.14As active layer 4, a P type Ga0.5Al0.5As clad layer 5, a P type Ga1-x AlxAs (0<=x<=0.18) layer 7 and a P type Ga0.8Al0.2As cap layer 6, which are caused to grow on the substrate successively in that order. The clad layers 2 and 5 have refractive indices smaller than that of the light guide layer 3, which in turn has a smaller refractive index than that of the active layer. Mesa stripes are formed, and buried with a P type Ga0.5Al0.5As current blocking layer 8 and an N type Ga0.5Al0.5As layer 9. In this case, since the growth of the side portion of the mesa stripes in initiated from the layer 7, the growth is allowed to progress smoothly without causing any incomplete growth. |
