| 摘要 |
PURPOSE:To inhibit the generation of a short channel effect, and to improve characteristics by forming source-drain regions to the periphery of a gate electrode surrounded by an silicon oxide film on a silicon substrate by a silicon solid-phase growth layer and a metallic silicide layer. CONSTITUTION:An element region surrounded by a thick oxide film 12 for isolating elements is formed on an Si substrate 11, and a MOS capacitor constituted by an oxide film 13 for the capacitor and a polycrystalline Si layer 14 and a transistor (TR) are formed in the element region. The TR has a gate electrode 16 consisting of polycrystalline Si on a gate insulating film 15 on the Si substrate 11, and has a gate section surrounded by an insulating layer 18, and the periphery of the TR adjacently has an Si solid-phase growth layer 22 and source and drain regions composed of layers of platinum silicide. In such constitution, since the lower surfaces of the source and drain regions and the lower surface of the gate insulating film coincide with the upper surface of the substrate, a depletion layer does not protrude to a channel region, and gate length is kept constant. Phosphorus is diffused to the Si solid-phase growth layer, and the resistance of the Si solid-phase growth layer is low. |
