| 摘要 |
PURPOSE:To obtain a photoreceptor superior in matching performance especially with a semiconductor laser and high in light responsivity by forming the photoreceptor having a photoreceptive layer made of amorphous silicon specified in layer structure. CONSTITUTION:The photoreceptor 100 is composed of a substrate 101, the first photoconductive layer 102 made basically of amorphous silicon, and the second layer 103 made basically of amorphous silicon contg. C are laminated on the substrate 101. The first layer 102 has a layer region 105 in contact with the substrate 101 contg. Ge in a uniform distribution in order to enhance absorption spectral characteristics in the longer wavelength region, and the second layer 103 contains a conductivity governing substance in a uniform distribution. |
