发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable to constantly maintain the consuming power at the aging time of high-temperature bias by a method wherein a heating resistor; which is made up for its consuming power, which is in short supply when high-temperature bias is impressed, and consumes the compensated power to continue its functions; is provided and a fuse is provided between the heating resistor and a power source line. CONSTITUTION:A part D, which fulfills the original functions of a semiconductor device, a heating resistor H and a fuse F are provided on a same semiconductor substrate. According to this method, the consuming power at the aging time of high-temperature bias can be turned into consuming power, which is needed at the part D, which fulfills the original functions of the device, by flowing fuse disconnecting current between A and C after an aging, wherein a power source impression is performed between A and C, ended.
申请公布号 JPS6032329(A) 申请公布日期 1985.02.19
申请号 JP19830141664 申请日期 1983.08.02
申请人 NIPPON DENKI KK 发明人 ICHIMURA ISAO
分类号 G01R31/28;G01R31/30;H01L21/326 主分类号 G01R31/28
代理机构 代理人
主权项
地址
您可能感兴趣的专利