| 摘要 |
<p>PURPOSE:To enable to protect the transistor made of polyimide, etc. by the guarantee of the transistor in heat insulating temperatures up to over 200 deg.C by a method wherein the electrode provided to the semiconductor thin film transistor constituting a picture display by being combined with a liquid crystal, etc. is composed of the laminated body of a heat insulating metal and a low reflectance metal. CONSTITUTION:The first metal 2 serving as the gate electrode is formed on an insulation substrate 1 of glass, etc., and an amorphous Si layer 4 is deposited over the entire surface including the metal via insulation layer 3. Next, the source electrode 7 and the drain electrode 8 opened are formed at the part opposed to the metal 2, with amorphous Si layers 9 and 10 containing phosphorus underlying the electrodes, and a polyimide 11 for transistor protection is adhered from inside the aperture to the ends of the electrodes 7 and 8. In this construction, the electrode 7 is put in a three-layer structure composed, from the substrate side, of the heat insulating metal 7a such as Cr, the low reflectance metal 7b such as Al, and the metal 7C such as Cr again, and the electrode 8 is also put in a three-layer structure of the same metals 8a, 8b, and 8c.</p> |
