| 摘要 |
PURPOSE:To obtain a laser, a lateral mode thereof is stable and which has low threshold currents, by laminating first and second clad layers consisting of the same conductor as a substrate on the III-IV group semiconductor substrate, forming a layer, which has a conduction type different from the second clad layer and a complex index of refraction thereof differs from that of the second clad layer, on the second clad layer, shaping an internal stripe through reactive ion etching and coating the layer having the complex index of refraction different from the second clad layer with a third clad layer having a complex index of refraction different from that of said layer. CONSTITUTION:An N type Ga0.55Al0.45As first clad layer 2, an un-doped Ga0.85 Al0.15As active layer 3, a P type Ga0.55Al0.45As second clad layer 4 and an N type GaAs current stopping layer 5 are laminated on an N type GaAs substrate 1 and grown in an epitaxial manner, and a resist 10 is used as a selective mask and a stripe is formed to the layer 5 through reactive ion etching through which an undercut is not generated. The resist 10 is removed, and a P type Ga0.55Al0.45 As clad layer 6 and a P type GaAs ohmic contact layer 7 are deposited on the whole surface while burying the surface of the exposed layer 4. |
