| 摘要 |
<p>PURPOSE:To lengthen the life of a cathode structure while preventing an electron discharge material from coming off from a cathode base body by giving concentration treatment of Si to a crystal grain field near the surface of the cathode base body. CONSTITUTION:A disc is punched out through a pressing process from a rolled plate, for instance, of an Ni alloy containing 0.06wt% of Mg and 0.03wt% of Si, and heated in hydrogen for performing the annealing and recrystallization treatment after being washed with trichloroethylene and warm water. Next, said disc is mounted on a sample stand inside a high frequency sputtering device to be subjected to treatment in order of Si coating, grain field diffusion treatment and surface etching. Si coating is so performed that mixed gas of H2 and Au is introduced by means of a pressure regulation valve aiming at Si as a target under the condition of, for instance, 1.5kV of plate voltage and 13.56MHz of power source high frequency. Thereby, coming-off of an electron emitting material from a cathode base body can be prevented thus obtaining the cathode structure having a long life.</p> |
