| 摘要 |
PURPOSE:To realize recessed structure without increasing processes, and to manufacture a capacitor having large capacitance by forming a groove in a Schottky junction forming prearranged region in a semiconductor substrate and shaping a metallic layer for forming a Schottky junction. CONSTITUTION:When an opening 6 for shaping a groove as the reference of mask alignment is formed, a predetermined number of openings 15 are also shaped to a resist layer section on a GaAs substrate region to which a Schottky junction must be formed, and grooves 7 and 16 are shaped by etching. A resist layer 5 and an SiO2 film 2 on a GaAs substrate are removed, the upper section of the GaAs substrate is coated anew with a resist film 8, and an Si ion- implanted layer 17 for forming an N-type region is shaped by implanting Si ions again. Lastly, an N<+> type region 11 as a contact region and an N-type active region 18 are formed through heat treatment at a high temperature, and an electrode 19 and an electrode 20 for shaping the Schottky junction are formed. The junction for a Schottky diode is shaped along the surface of the irregular GaAs substrate, thus remarkably increasing a junction area. |
