| 摘要 |
PURPOSE:To obtain the titled device whose static capacitance is small and static withstand voltage is large, and which has static shielding effect on the charges from outside by arranging a metallic conductor on an oxide insulation film in the periphery of the upper surface part of an ion implantation resistor by excluding said part, in a bi-polar integrated circuit. CONSTITUTION:By excluding the upper surface part of the ion implantation part (P<+> part 5 serving as a resistor), only its periphery is shielded with the metallic conductor (Al) 6. Thereby, the capacitance reduces to one-several numbers, and the static withstand voltage multiplies by several times. The capacitance and the static withstand voltage are determined by the ratio of the thickness of the oxide insulation film, but, in this case, determined by the part 2 (5,000-10,000Angstrom ) of a thicker film. The width (d) in removing the metallic conductor 6 is approx. 10mu, and accordingly the static shielding effect can be made so as to hardly vary with the charges from outside. |
