| 摘要 |
PURPOSE:To prevent dark currents in a semiconductor phot detector with an unequal junction interface, and to lower the lower limit of a reception level of an optical signal further by forming a high-concentration impurity introducing region to a hetero-junction or a homo-junction in a region except a region corresponding to a light-receiving region. CONSTITUTION:An InGaAs semiconductor layer 2, an InGaAsP semiconductor layer 3 and an InP semiconductor layer 4 are grown on an InP substrate 1 in an epitaxial manner. An ion implantation method is applied, silicon is introduced selectively to the InP semiconductor layer 4 in the quantity of a dose such as one of approximately 3X10<12>(cm<-2>) through a proper mask, and a reach-through type dielectric resistance drop region 5 is formed. A diffusion method is applied, sulfur is diffused from the surface with the exception of a section, a light reception thereof is expected originally, and an N type high-concentration impurity introducing region 6 is formed. An InP semiconductor layer 7 is shaped. The ion implantation method is applied, beryllium is introduced selectively in the quantity of a dose of approximately 5X10<13>(cm<-2>), and a P type light-receiving region 8 is formed. A protective film is shaped, and an electrode is formed, thus completing a semiconductor photo detector. |
