| 摘要 |
PURPOSE:To reduce the tail of an IC at the time of switching by a method wherein a part in a comb-tooth supporting part of an emitter region is covered with an insulation film, and thus the width of the emitter region of the comb- tooth supporting part is made smaller than the width of the emitter region of the comb-tooth part. CONSTITUTION:The emitter region 3 and an emitter electrode 5 are formed in comb-form on a semiconductor substrate 1. In the comb tooth supporting part of the comb-form emitter region 3, a non-emitter region 10 is formed so that the width of the emitter region of the comb-tooth supporting part becomes smaller than the width of the emitter region of the comb-tooth part, and this non-emitter region 10 is covered with an oxide film 4'. Since the emitter electrode 5 is formed by covering this oxide film 4', the bonding pad of the emitter is provided in the comb-tooth supporting part of the emitter electrode 5. By such a constitution, the longest distance l'EB of carriers flowing through a base region becomes extremely small under the emitter region 3. Therefore, the off-wave form tail of a transistor can be reduced. |
