| 摘要 |
PURPOSE:To reduce the thermal resistance between the operating region of a semiconductor chip and a heat sink effectively and with good controllability by a method wherein a semiconductor substrate or the substrate and a partial semiconductor layer are selectively removed in chemical manner, and the exposed surface is connected to the heat sink. CONSTITUTION:An N type InGaAsP layer 2, the first clad layer 3 of N type InP, an InGaAsP active layer 4, the second clad layer 5 of P type InP, and an N type InGaAsP contact layer 6 are successively grown on the N type InP substrate 1. A P type stripe region 8 and a P-side electrode 9 are formed by selectively forming an insulation film 7. The back surface of the substrate 1 is polished and selectively covered with protection films 10, and then the InP substrate 1 is etched by using hydrochloric acid. The N type InGaAsP layer is not etched, and the exposed surface presents a mirror surface. An N-side electrode 15 is formed by forming a metallic film 13 and plating Au. The N-side electrode 15 is connected to the heat sink 16. |
