| 摘要 |
In a process of building up semi-conductor crystals, a semi-conductor substrate and a semi-conductor coating material are heated in an enclosure so that a temperature differential exists between the two, the substrate temperature being sufficient to volatilize part of the semi-conductor and thus form a fresh surface, the temperature differential then being reversed so that the coating material is at a higher temperature and is volatilized and deposited on the cooler freshened surface of the substrate. The following materials may be formed: GaAs on GaAs; GaAs on Ge; AlP on Si; GaP on Si. The process normally produces a P-type deposit on N-type substrates or vice versa and the process may be carried out under vacuum which may contain active impurities such as S, Se, Te, Zn and Cd, or in a carrier gas such as chlorine. It is preferable that the unit cell size of the substrate and the coating material are approximately the same size.ALSO:In a process of building up semi-conductor crystals, a semi-conductor substrate and a semi-conductor coating material are heated in an enclosure so that a temperature differential exists between the two, the substrate temperature being sufficient to volatilize part of the semi-conductor and thus form a fresh surface, the temperature differential then being reversed so that the coating material is at the higher temperature and is volatilized and deposited on the cooler freshened surface of the substrate. The following materials may be formed: GaAs on GaAs; GaAs on Ge; AlP on Si; GaP on Si. The process normally produces a p-type deposit on n-type substrates or vice versa and the process may be carried out under vacuum which may contain active impurities such as S, Se, Te, Zn and Cd, or in a carrier gas such as chlorine. It is preferable that the unit cell sizes of the substrate and the coating material are approximately the same. |
