| 摘要 |
PURPOSE:To clean the interface of a desired region by the lateral diffusion of H2 by a method wherein windows are opened through an electrode and a nitride layer at the fixed pitch at the position of channel stopper regions, and H2 annealing is performed via these windows. CONSTITUTION:The second conductivity type region 2 is formed on one main surface of a semiconductor substrate 1 of the first conductivity type, and bulk channels are formed thereby. The channel stopper regions 3 wherein an impurity of the first conductivity type is implanted are formed between the regions 2. An SiO2 film 4 is formed over the entire surface of one main surface of the substrate 1, and the Si nitride film 5 is selectively adhered on the film 4. The film 5 is not formed at the regions corresponding to the rectangular window parts 6. The first electrode 7 is formed on the film 5. H2 is diffused into the film 4 via the window parts 6. Since a window part is formed at every region 3, cleaning can be performed over the entire region of the interface. |
