| 摘要 |
PURPOSE:To enable a sufficiently small resist pattern as well as a black matrix pattern having a small dot diameter or stripe diameter to be formed even if the diameter of a light source is small, and to prevent generation of exfoliated part of graphite powder by performing as an intermediate treatment a process which forms a water-soluble high molecular film containing metal oxide at the recess of a horn pattern-like photoresist film. CONSTITUTION:A slurry which is prepared by dispersing the predetermined amount of water-soluble resin and metal oxide into water is spread onto the internal surface of a face plate panel 3 and then dried in order to form a water-soluble high molecular film. In this case, consequently, the recess of the horn pattern-like photoresist film 6 and the internal surface of the face plate panel are covered with the water-soluble high molecular film. The amount of these water-soluble resins to be mixed is preferred to be 1-10wt% basing on the total amount of the slurry. Next, the water-soluble high molecular film is developed in order to remove said film. After this developing treatment, only the water-soluble high molecular film which is formed in the recess of said horn pattern-like photoresist film remains without being removed. Consequently, non- luminous absorptive substance to be spread in next process is never stuck directly onto the internal surface of the face plate panel in the recess. |
