| 摘要 |
PURPOSE:To prevent substantial decrease in the yield of a semiconductor memory device, by accessing a pushdown register in terms of column via s coincident circuit storing the storage area of a defective memory cell. CONSTITUTION:When a column address 4 is coincident with a storage area of the defective memory cell stored in the 1st and the 2nd coincident circuits 16, 17, an output of the circuits 16, 17 is inverted to a high level, and left and right pushdown memory areas 14, 15 corresponding to left and right memories taking a row address decoder 3 as symmetry respectively are accessed via left and right pushdown memory area selecting column decoders 12 and 13. With the pushdown toward the column direction of the memory device being susceptible to generate errors toward the column direction, the substantial yield of the semiconductor memory device is not decreased even if a part of defective memory cell takes place. |
