ELEKTRISKT VEXLINGSBART, ICKE-FLYKTIGT MINNESORGAN MED SVEVANDE STYRE

摘要

An electrically alterable, nonvolatile floating gate memory device is described having enhanced write efficiency by reason of an extension of the floating gate member. The extension is made to extend over the drain line of an adjacent memory device and serves to provide the floating gate member with additional capacitance during the write operation thereby permitting a higher write efficiency for a given voltage.