| 摘要 |
PURPOSE:To improve a semiconductor element in airtightness against moisture and alkaline ions, by a method wherein the surface of a semiconductor element in the region other than a bonding pad part is formed from a non-porous Al2O3 passivation film which allows transmission of ultraviolet rays. CONSTITUTION:A photoresist film 6 is formed on an Al film 5 in a pad part. A selective anodizing is carried out using an electrolyte formed by an mixing aqueous tartaric acid solution propylene glycol together and adding aqueous ammonia to the mixture. By performing an anodizing in this electrolyte, the Al film 5 in the portion not protected by the photoresist 6 is transformed into a non-porous Al2O3 film 7. The photoresist film 6 is removed, and a heat treatment is carried out in N2. |
