| 发明名称 |
Method of forming amorphous silicon films |
| 摘要 |
In a method of forming a layer of an amorphous silicon compound by subjecting a gas containing a silane compound to glow discharge decomposition, the improvement wherein the substrate on which the amorphous silicon compound is to be deposited is positioned within 3 cm above or below the end of a positive column formed by said glow discharge.
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| 申请公布号 |
US4410559(A) |
申请公布日期 |
1983.10.18 |
| 申请号 |
US19810316422 |
申请日期 |
1981.10.29 |
| 申请人 |
HAMAKAWA, YOSHIHIRO;TAWADA, YOSHIHISA |
发明人 |
HAMAKAWA, YOSHIHIRO;TAWADA, YOSHIHISA |
| 分类号 |
C23C16/24;C23C16/30;C23C16/50;G03G5/08;H01L21/205;H01L31/04;H01L31/20;(IPC1-7):C23C11/00;H01L31/18 |
主分类号 |
C23C16/24 |
| 代理机构 |
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