| 摘要 |
PURPOSE:To obtain a large and uniform crystal of silicon carbide by the growth from a solution of silicon carbide using a rare earth metal as a solvent, by using a crucible made of a metal (oxide) which is hardly corroded by the rare earth metal. CONSTITUTION:A crucible 3 is manufactured using a metal (e.g. Ta, Mo, W, etc.) or metal oxide (e.g. magnesia) which is hardly corroded by rare earth metals. A rare earth metal (e.g. Pr, Y, Nd, etc.) and SiC powder 1 are charged in the crucible 3, and the crucible 3 is inserted into the reaction tube 5 wound with a high-frequency coil 6. The content is heated while passing an inert gas through the reaction tube along the direction of the arrow to melt the rare earth metal and form an SiC solution 2. The vertical temperature distribution of the crucible 3 is set to higher at the upper region and lower at the lower region, and the SiC crystal 4 is deposited and grown in the lower low-temperature region of the crucible 3. |
