| 摘要 |
PURPOSE:To offer a manufacturing method of a semiconductor device which directly applying single crystallization to a polycrystalline layer or an amorphous layer on an insulating layer in the transverse direction by using single crystal on a substrate as a nucleus by a method wherein the insulating layer and the polycrystalline layer or the amorphous layer are buried in a recessed section formed in a single crystalline substrate and heat treatment is performed. CONSTITUTION:After forming a recessed section 4 in a single crystalline silicon substrate 1, SiO2 2 is grown by a vapor growth method and the SiO2 2 is also etched by using a resist 5 as a mask. Next, after forming a polycrystalline or amorphous silicon layer 3 on the whole surface by a chemical vapor deposition (CVD) method or a deposition method, single crystallization is applied to the layer 3 in the transverse direction by using laser beams, electron beams, thermal radiation beams from an electric furnace or the like as a heating source. A nitride film is left on single crystalline silicon grown on the SiO2 and etching and oxidation for the single crystalline silicon are done by using the nitride film as a mask and a single crystal 6 completely surrounded by an insulating layer is formed. After that, complementary MOS structure is formed by an impurity addition method. |
