发明名称 |
Process for producing photovoltaic solar cells |
摘要 |
The invention relates to a process for producing photovoltaic solar cells made of amorphous silicon by gas-phase deposition. In this connection, not only p-i-n and n-i-p solar cells are mentioned, but also those of the Schottky barrier type. To reduce the surface defect density of the hydrogen-depleted peripheral surface layer of the photovoltaic solar cells, the said layer is stripped to a depth of up to about 0.1 mu m by etching. According to another version of the invention, after the first step in the gas-phase deposition, the photovoltaic solar cell is cooled as rapidly as possible to ambient temperature and also advantageously exposed to a hydrogen glow discharge during cooling. The individual process steps as disclosed by the invention can also be combined with one another. <IMAGE>
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申请公布号 |
DE3143513(A1) |
申请公布日期 |
1983.05.19 |
申请号 |
DE19813143513 |
申请日期 |
1981.11.03 |
申请人 |
MESSERSCHMITT-BOELKOW-BLOHM GMBH |
发明人 |
G.,DIPL.-PHYS.DR.RER.NAT. MUELLER,JOSEF |
分类号 |
H01L31/062;H01L31/075;H01L31/20;(IPC1-7):01L31/18 |
主分类号 |
H01L31/062 |
代理机构 |
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地址 |
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