发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To enable to set the interval between both power lines without excessive bent of metallic wire for connecting between NOR and NAND logics and to facilitate a design by an automatic processing by forming an additional diffused layer pattern in the structure of a circuit associated with multi-input logic such as NAND logic and NOR logic, thereby producing output signals from arbitrary positions. CONSTITUTION:A diffused layer pattern is added from the lower part of a load transistor so that a high voltage power line and a low voltage power line are coupled in parallel with the pattern which performs an NAND logic, thereby producing an output from an arbitrary position of the pattern. A diffused layer pattern 301 is added at the positions of metallic layer wires 302, 303, thereby producing the output signal via the metallic layer wire 304.
申请公布号 JPS5839032(A) 申请公布日期 1983.03.07
申请号 JP19810137437 申请日期 1981.09.01
申请人 NIPPON DENKI KK 发明人 ISHIZAKA YOSHIYUKI
分类号 H01L21/822;H01L21/3205;H01L21/8222;H01L23/52;H01L27/04;H01L27/08;H01L27/082 主分类号 H01L21/822
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