| 摘要 |
PURPOSE:To realize a memory circuit by a small number of gates, by constituting a memory cell by cross coupling-connecting input/output terminals of the first and second coincidence gates. CONSTITUTION:A memory cell 100 is constituted by cross coupling-connecting input/output terminals of the first and second coincidence gates 1, 2. To the other input terminal of the first coincidence gate 1, an output terminal of the third coincidence gate 3 is connected. To one input terminal DI of the third coincidence gate 3, an input signal is applied, and also to the other input terminal L1, the first loading signal is applied. Also, to the other input terminal L2 of the other input terminal L2 of the second coincidence gate 2, the second loading signal incoming simultaneously with a trailing edge of the first loading signal or earilier than it in its time is applied. |
