发明名称 |
Method for making semiconductor device |
摘要 |
A semiconductor device prepared by forming a silicon substrate of one conductor type having a surface of the (100) crystal plane, opening a rectangular window having sides parallel to the <100> crystal axis, etching the interior of the rectangular window with an anisotropic etching solution to form a dent, removing the oxide film and growing an epitaxial layer of a conductor type opposite to that of the substrate on the entire surface of the substrate, and masking the dent with an oxide film and etching the epitaxial layer with an anisotropic etching solution to flatten the surface of the epitaxial layer, and a method for making this semiconductor device.
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申请公布号 |
US4362599(A) |
申请公布日期 |
1982.12.07 |
申请号 |
US19810236841 |
申请日期 |
1981.02.23 |
申请人 |
HITACHI, LTD. |
发明人 |
IMAIZUMI, ICHIRO;KIMURA, MASATOSHI;UEHARA, KEIJIRO |
分类号 |
H01L21/306;H01L21/308;H01L21/761;H01L21/8222;H01L27/082;H01L29/04;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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