| 摘要 |
PURPOSE:To suppress the irregularity of a semiconductor device by forming two- layer insulating film of an oxidized silicon by a thermal oxidation and nitrided silicon by a thermal nitration on the surface of a semiconductor substrate, thereby stabilizing the boundary characteristics between semiconductor and insulating film. CONSTITUTION:A thermally oxidized SiO2 film is formed in dry oxygen atmosphere on an Si semiconductor substrate, an Si film is formed by a CVD method of reaction for decomposing SiH4 into Si and H2, is exposed with NH3 atmosphere, and a thermally nitrided Si3N4 film is formed. Thus, 2-layer insulating film is formed, aluminum vacuum deposition is then performed with metal mask to form an aluminum electrode, thereby forming an MNOS structure diode. When this is compared with the nitrided silicon film by the conventional CVD method, stable and less irregular characteristics can be provided by forming the thermally oxidized SiO2 film and thermally nitrided Si3N4 film on the surface of the Si substrate. |
