| 摘要 |
PURPOSE:To maintain stabilized basic mode operation while preventing local concentration of carriers by providing a striped current cutoff region on the surface of a semiconductor laser substrate. CONSTITUTION:After the striped current cutoff region 3 of p type GaAs or high resistance GaAs is formed on the surface of the n type GaAs substrate 2, an n type GaAlAs film 4, an active film 5, a p type GaAlAs film 6 and a p type GaAs electrode forming film 7 are successively grown. Next, a p type electrode 9 is formed through a SiO2 film 8 and, on the substrate 2, an n type electrode 1 is formed. By this setup, equivalent stripe width can be widened so that no local concentration of carriers take place. Therefore, it is possible to maintain stabilized basic mode operation so as to be able to produce semiconductor laser of superior current-optical output linearity. |
