| 摘要 |
PURPOSE:To obtain a single-crystallized nucleus, by laser irradiation of the polysilicon over the second layer from a single crystal column inside an opened window with the hole part opened on the SiO2 film on a single crystal silicon constantly kept opened. CONSTITUTION:The SiO2 film 2 is formed with the hole 3 on the single crystal silicon substrate, and the whole surface is adhered with the first layer of silicon with the laser beam irradiation from the hole 3 to be single-crystallized to form the first LSI layer 4. Next, the upper part on a layer insulating film 9 is opened to a hole 3' to form a polysilicon layer. When laser irradiation is started from the hole 3', a single crystal silicon is formed in the hole 3 like a column to the crystalline nucleus of polysilicon. The hole 3 may be formed on a scribed line. |
