| 摘要 |
<p>A negative acting resist composition is used which comprises a novolak resin which has a window of low optical absorption in the deep ultraviolet range and an aromatic azide sensitizer which has a complementary peak of high optical absorption in the deep ultraviolet range. The resist composition is exposed with deep ultraviolet radiation in the window/peak region, for example, at about 250 to 265 nm, and is thereafter developed with an aqueous alkaline solvent to provide a negative surface relief pattern.</p> |
