| 摘要 |
PURPOSE:To provide a semiconductor device which is resistant against contamination by a contaminant such as sodium, by a method wherein the surface of a semiconductor chip is protected by covering the exposed silicone surface with a silicone di-oxide film by oxygen plasma process. CONSTITUTION:An aperture 3 as a contact hole for drawing out an electrode is made in a silicone wafer 1 in which an element region 2 is formed and a prescribed aluminum electrode pattern 5 is formed on the surface of the wafer 1. And a backside electrode 6 is also formed by depositing gold on the back of the wafer 1 overall. After the said wafer is divided into chips, they are exposed in oxygen plasma so that the exposed surface of the silicone is oxidized and the chips are covered with stable silicone di-oxide. As the exposed surface of the chips is covered with an insulation film, the chips are protected from contamination. |
