发明名称 DIAMOND AND CUBIC BORON NITRIDE ABRASIVE COMPACTS USING SIZE SELECTIVE PARTICLE LAYERS
摘要 <p>Disclosed is an improved process for preparing a composite compact wherein a mass of abrasive crystals, a mass of metal carbide, and a bonding medium are subjected to a high-temperature/high pressure process for providing a composite compact. The sintered carbide mass supports the mass of abrasive crystals and bonding or catalyst metal, and the abrasive crystal grains are directly bonded to adjacent crystal grains in the mass thereof. Such improved process comprises disposing the mass of abrasive crystals in layers wherein the coarsest layer is closest to the carbide mass and is composed of crystals having a largest dimension of between about 75 and 500 microns and the finest layer is disposed farthest away in the carbide mass and is composed of crystals having a largest dimension of less than 10 microns. The abrasive crystals are selected from the group consisting of diamond and cubic boron nitride and preferably are diamond; the metal carbide preferably is tungsten carbide; and the bonding metal preferably is cobalt. The resulting improved composite compact also is disclosed.</p>
申请公布号 IL64301(D0) 申请公布日期 1982.02.28
申请号 IL19810064301 申请日期 1981.11.18
申请人 GENERAL ELECTRIC CO 发明人
分类号 C04B35/52;B01J3/06;B22F7/06;B24D3/06;C04B35/583;C22B26/00;C22C26/00;C30B29/38 主分类号 C04B35/52
代理机构 代理人
主权项
地址