发明名称 SEMICONDUCTOR CIRCUIT DEVICE
摘要 PURPOSE:To reduce unnecessary consumption of power source by a method wherein a conductive layer is formed on a main surface of the reverce side of a monocrystalline substrate having a high conductivity to supply the power source to circuit elements. CONSTITUTION:A conductor layer PL is formed on one side of the monocrystalline substrate B by a high frequency spattering of an Al-Cu alloy, and conductor layers PLL1 AND PLL2 are formed on a main surface M by high frequency spattering of Mo and Au. Then, an insulating layer I1 and a conductor layer GL are formed by high frequency spattering of SiO2 and the Al-Cu alloy, and the conductor layer GL is made a prescribed shape by a photoetching. After insulating layers I2, I3, I4 and conductor layers SL1, SL2 having been formed by repeating the same process, a through hole is formed and an electrode connecting each conductor layer is formed. Subsequently, a semiconductor circuit element Q is mounted to be connected with a lead. Accordingly, the current flows through the substrate B and is not consumed unnecessarily.
申请公布号 JPS56125853(A) 申请公布日期 1981.10.02
申请号 JP19800028343 申请日期 1980.03.06
申请人 NIPPON TELEGRAPH & TELEPHONE 发明人 MATSUI NORIO;KON TAICHI;OOSAKI TAKAAKI
分类号 H01L21/822;H01L21/3205;H01L23/52;H01L23/538;H01L27/04 主分类号 H01L21/822
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