发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To protect an IC from a static electricity by a method wherein a resistor is connected between a base and an emitter and a collector is connected to a signal input terminal and the emitter is connected to the earthing terminal. CONSTITUTION:A surge voltage enters a terminal 1. At this time, if a resistor 8 is small, an avalanche current flows and if the resistor 8 is large, an avalanche breakdown is supressed. And further, when a slight leak exists between a base and an emitter, it causes a current amplified sharply with the current amplificarion ratio of a transistor being lead-in. Accordingly, if a capacitance of the resistor 8 is selected in approximately 10kOMEGA, it can sufficiently prevent a p-n junction from a breakdown due to an avalanche current and also, it can prevent a leak current between the base and the emitter from running, thus, protecting the IC from a static electric surge.
申请公布号 JPS5679463(A) 申请公布日期 1981.06.30
申请号 JP19790157106 申请日期 1979.12.03
申请人 MATSUSHITA ELECTRONICS CORP 发明人 ACHIHA MASAYOSHI
分类号 H01L27/04;H01L21/331;H01L21/822;H01L27/02;H01L27/06;H01L29/73 主分类号 H01L27/04
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