| 摘要 |
<p>Aluminum electrically conducting patterns (71, 72) for integrated circuits (10) are achieved with narrow lines (73-75) and unexpectedly-high electromigration characteristics by making the crystal grains (42-45) of the pattern into a chain-shaped structure with all of the grains (42-45) in the same (111) orientation. A process for achieving the structure is also described (in fig 5). </p> |
