发明名称 TOTAL REFLECTION X-RAY DIFFRACTION MICROSCOPIC APPARATUS
摘要 PURPOSE:To observe the crystal flaw in the vicinity of the surface of a sample, in allowing selected X-rays to be incident to the sample at an incident angle equal to or less than a critical angle generating total reflection, by shortening the wavelength of a monochrometer. CONSTITUTION:When the wavelength of X-rays 15 made monochromatic by a monochrometer 14 is slightly shortened by setting the omega rotation of a first goniometer 13 to a low angle, the angle thetabeta of diffraction from an asymmetric reflecting surface is slightly reduced so as to follow the shortening of the wavelength of X-rays 15 and, therefore, by performing the omega rotation of a second goniometer 17 at a low angle, the diffracted wave from a sample is obtained. As a result, the incident angle thetabeta-alpha of the X-rays made monochromatic incident to the sample 18 is reduced and, when this work is repeated, the incident angle thetabeta-alpha can be allowed to approach 0 without missing the asymmetric reflection from the sample 18 and, finally, a critical angle generating total reflection can be reduced. By this method, the diffracted wave from the sample can be microscopically observed under such a condition that the incident angle thetabeta-alpha is set to the critical angle or less by a photographic film 19.
申请公布号 JPH04218753(A) 申请公布日期 1992.08.10
申请号 JP19900070209 申请日期 1990.03.19
申请人 NEC CORP;KOUENERUGII BUTSURIGAKU KENKIYUU SHIYOCHIYOU 发明人 KITANO TOMOHISA;ISHIKAWA TETSUYA
分类号 G01N23/20;G01N23/207 主分类号 G01N23/20
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