| 摘要 |
PURPOSE:To obtain an aperture stop with high precision easily by forming a projection of a fixed sectional shape and dimension on the substrate, accumulating aperture material around the projection and by leaving only the aperture material at etching the substrate. CONSTITUTION:Both surfaces of a (100) single crystal silicon substrate 1 are coated with SiO2 film, a resist film pattern 3 of a desired shape and dimension is formed on one side film 2, the pattern 3 is made a mask and the film 2 is selectively removed by etching. Next, the pattern is removed, the substrate 1 is etched with anisotropy aqueous solution of both KOH isopropyl alcohol on making the remained film 2 beneath the pattern a mask, a projection 4 is produced only below the film 2. After this, an aperture layer 5 of Au, Ag, and Cu is formed around the projection on the thin layer of the substrate by electroplating, the film 2 and substrate 1 and all removed by etching and only the circular aperture of layer 5 is remained. A rise 6 around the aperture does not interferes with the use. |
