| 发明名称 |
TRIMMING METHOD FOR RESISTANCE VALUE OF POLYCRYSTALLINE SILICON RESISTORS ESPECIALLY USED AS SEMICONDUCTOR INTERGRATED CIRCUIT RESISTORS |
| 摘要 |
Current having a density higher than a critical value is passed through a polycrystalline resistor doped with impurities at a concentration higher than a critical value to decreasingly correct the initial value of the resistance, thereby trimming the resistance value of the resistor. When the resistor is used in a semiconductor integrated circuit, the current is passed through the existing (not additional) terminals of the integrated circuit. |
| 申请公布号 |
GB1559370(A) |
申请公布日期 |
1980.01.16 |
| 申请号 |
GB19780017513 |
申请日期 |
1978.05.03 |
| 申请人 |
NIPPON TELEGRAPH & TELEPHONE PUBLIC CORP |
发明人 |
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| 分类号 |
H01L27/04;H01C17/22;H01L21/02;H01L21/326;H01L21/822;H01L27/01;(IPC1-7):01C17/22 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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