| 摘要 |
PURPOSE:To enable writing and deletion by using complementary MOSFET's and changing the potential of a substrate side semi-conductor region to two independent values different from that of the other semi-conductor region. CONSTITUTION:In a base 111, the first semi-conductor region 1 and the second semi-conductor region 2 are pn-joined and separated by the third semi-conductor region 3. On the region 1 and the region 32 contacting the surface of the region 3, MOSFET's 4 and 5 are formed, and on the region 2, an MOSFET 6 of a variable threshold value is formed, and the MOSFET's 4 and 5 are connected complementarily. In this construction, the region 1 is set at a standard value 0V, the gate 63 of the FET 6 is set at 0V, and applying, for instance, +30V to the substrate 2, the region 3 is set at +30V. By so doing, the threshold value of the FET 6 moves to the negative directon and deleting operation is executed. On the other hand, when writing or reading, the region 2 is set at 0V and the region 3 is set at, for instance, +10V. By so doing, the threshold value of the FET moves to the negative direction. |
