| 摘要 |
<p>PURPOSE:To enable a memory unit to function as both mask ROM and RAM by composing the memory unit of a flip-flop circuit composed of a bipolar transistor and IGFET. CONSTITUTION:In P-type semiconductor substrate 1, N-type emitter region 2 is formed by diffusion, inside of which P-type base region 3 is provided, and P-type channel stopper region 4 is formed by diffusion in substrate 1 at both the sides of region 2 with region 2 betweem. In region 3, N<+>-type collector region 5, N<+>-type source region 6 making region 2 and substrate 1 conductive each other, and N<+>- type drain region 7 in substrate 1 are formed by diffusion and gate insulating film 8 between regions 6 and 7 and field insulating film 9 on other regions are both bonded. In this constitution, electrode wiring 10 is provided so as to connect region 5 and gate electrode 11 together, which are connected to terminal A; and regions 3 and 7 are connected in common to terminal B and region 6 is to terminal C. Further, terminals A and B are connected to terminal D via resistances R1 and R2.</p> |
